.svg)
Erratum: Titanium nitride sensing film-based extended-gate field-effect transistor for chemical/biochemical sensing applications (Journal of the Electrochemical Society (2021) 168 (107510) DOI: 10.1149/1945-7111/ac30aa)
| dc.contributor.author | Kumar D.; Jit S.; Sinha S.; Sharma R.; Mukhiya R. | |
| dc.date.accessioned | 2025-05-23T11:26:53Z | |
| dc.description.abstract | Incorrect versions of two figures (5a & 7b) were presented in the published paper. The corrected versions are shown below. The analysis presented in the paper is not changed. (Figure Presented). © 2021 The Electrochemical Society (“ECS”). | |
| dc.identifier.doi | https://doi.org/10.1149/1945-7111/ac34d1 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/10804 | |
| dc.relation.ispartofseries | Journal of the Electrochemical Society | |
| dc.title | Erratum: Titanium nitride sensing film-based extended-gate field-effect transistor for chemical/biochemical sensing applications (Journal of the Electrochemical Society (2021) 168 (107510) DOI: 10.1149/1945-7111/ac30aa) |