Erratum: Titanium nitride sensing film-based extended-gate field-effect transistor for chemical/biochemical sensing applications (Journal of the Electrochemical Society (2021) 168 (107510) DOI: 10.1149/1945-7111/ac30aa)

Abstract

Incorrect versions of two figures (5a & 7b) were presented in the published paper. The corrected versions are shown below. The analysis presented in the paper is not changed. (Figure Presented). © 2021 The Electrochemical Society (“ECS”).