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Analytical modeling and ATLAS™ based simulation of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMGSGOI) MOSFETs
| dc.contributor.author | Kumar M.; Dubey S.; Tiwari P.K.; Jit S. | |
| dc.date.accessioned | 2025-05-24T09:55:45Z | |
| dc.description.abstract | An analytical study of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMG-SGOI) MOSFETs has been presented in this paper. It has been shown that DMG-SGOI structure alleviates the short-geometry problems like short-channel effects (SCEs), drain induced barrier lowering (DIBL) and hot-carrier effects (HCEs) more efficiently than strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFET structures. © 2011 IEEE. | |
| dc.identifier.doi | https://doi.org/10.1109/MSPCT.2011.6150481 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/20218 | |
| dc.relation.ispartofseries | 2011 International Conference on Multimedia, Signal Processing and Communication Technologies, IMPACT 2011 | |
| dc.title | Analytical modeling and ATLAS™ based simulation of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMGSGOI) MOSFETs |