Analytical modeling and ATLAS™ based simulation of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMGSGOI) MOSFETs

Abstract

An analytical study of the surface potential of double-material-gate strained-Si on Silicon-Germanium-on-Insulator (DMG-SGOI) MOSFETs has been presented in this paper. It has been shown that DMG-SGOI structure alleviates the short-geometry problems like short-channel effects (SCEs), drain induced barrier lowering (DIBL) and hot-carrier effects (HCEs) more efficiently than strained-Si on Silicon-Germanium-on-Insulator (SGOI) MOSFET structures. © 2011 IEEE.