Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

dc.contributor.author	Kumar S.; Baral K.; Chander S.; Singh P.K.; Singh K.; Jit S.
dc.date.accessioned	2025-05-24T09:31:45Z
dc.description.abstract	In this work, the influence of localized interface charges on the energy band diagram, electric-field, surface potential and input-output characteristics of dual-material (DM) double-gate (DG) tunnel field-effect transistors (TFETs) have been demonstrated. These localized charges are created near the source/channel junction due to hot carrier effects (BCEs). The energy band diagram, electric field, surface potential and drain current of DM DG TFETs with and without localized interface charge density (N f ) is also stuided. A two-dimensional (2-D) numerical simulation software ATLAS™ has been used to obtain the results of DM DG TFET devices. © 2018 IEEE.
dc.identifier.doi	https://doi.org/10.1109/I2CT.2018.8529418
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/17357
dc.relation.ispartofseries	2018 3rd International Conference for Convergence in Technology, I2CT 2018
dc.title	Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

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