Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

Abstract

In this work, the influence of localized interface charges on the energy band diagram, electric-field, surface potential and input-output characteristics of dual-material (DM) double-gate (DG) tunnel field-effect transistors (TFETs) have been demonstrated. These localized charges are created near the source/channel junction due to hot carrier effects (BCEs). The energy band diagram, electric field, surface potential and drain current of DM DG TFETs with and without localized interface charge density (N f ) is also stuided. A two-dimensional (2-D) numerical simulation software ATLAS™ has been used to obtain the results of DM DG TFET devices. © 2018 IEEE.