Noise analysis of InP/InGaAs superlattice avalanche photodiode

dc.contributor.author	Rajamani V.; Madheswaran M.; Chakrabarti P.
dc.date.accessioned	2025-05-24T09:58:41Z
dc.description.abstract	A theoretical study of the noise characteristics of an InP/In0.53Ga0.47 as Superlattice Avalanche photodiode (SL-APD) has been presented. It has been found that an improvement in the value of the effective hole-to-electron ionization rate ratio (βeff/αeff) for the SL-APD structure results in a low-noise behaviour of the device. The device has a very high gain-bandwidth product (≈450 GHz) and a low excess noise factor at moderate gain. It is expected to find application as a highly sensitive low-noise photodetector in optical receiver unit for long-haul fiber optic communication system in 1.3 to 1.6 μm.
dc.identifier.doi	https://doi.org/10.1080/03772063.2000.11416158
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/23582
dc.relation.ispartofseries	IETE Journal of Research
dc.title	Noise analysis of InP/InGaAs superlattice avalanche photodiode

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