Noise analysis of InP/InGaAs superlattice avalanche photodiode

Abstract

A theoretical study of the noise characteristics of an InP/In0.53Ga0.47 as Superlattice Avalanche photodiode (SL-APD) has been presented. It has been found that an improvement in the value of the effective hole-to-electron ionization rate ratio (βeff/αeff) for the SL-APD structure results in a low-noise behaviour of the device. The device has a very high gain-bandwidth product (≈450 GHz) and a low excess noise factor at moderate gain. It is expected to find application as a highly sensitive low-noise photodetector in optical receiver unit for long-haul fiber optic communication system in 1.3 to 1.6 μm.