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A Self-Assembled Polymer Nanocomposite-Based Low-Voltage White Light Phototransistor With UV-Cured Synthesized LaZrOx Dielectric

dc.contributor.authorVerma A.; Kumar D.; Mishra V.N.; Prakash R.
dc.date.accessioned2025-05-23T11:16:48Z
dc.description.abstractA low-cost floating film transfer (FTM) method processed gold-doped poly(3-hexylthiophene-2,5-diyl) (P3HT)-based low-voltage organic thin-film transistor (OTFT) has been fabricated and used for white light sensing. The OTFT fabrication uses a solution-processed spin casting technique for high- k dielectric growth and an FTM method for metal nanoparticle-doped organic semiconductor growth. The developed metal nanoparticle-doped organic semiconductor using FTM has the advantage of high crystallinity, self-assembly, and cost-efficient minimal wastage over other conventional film deposition techniques. The synthesized high- k dielectric film, synthesized by the low-temperature UV-cured method, offers a high dielectric capacitance of 390 nF/cm2, a low leakage current density of 0.1 μA/cm2 at -5 V, and smooth film with a surface roughness of 0.724 nm, making it appropriate for low-voltage-driven phototransistor. The device results in a photosensitivity of 248%, a high photoresponsivity of 4.41 A/W, and a specific detectivity of 3.35× 1011 Jones with a low response/recovery time of 53/85 ms at 204 μW/cm2 white light irradiation. This article explains the detailed process of device fabrication and its performance in white light sensing applications. © 1963-2012 IEEE.
dc.identifier.doihttps://doi.org/10.1109/TED.2023.3274500
dc.identifier.urihttp://172.23.0.11:4000/handle/123456789/6681
dc.relation.ispartofseriesIEEE Transactions on Electron Devices
dc.titleA Self-Assembled Polymer Nanocomposite-Based Low-Voltage White Light Phototransistor With UV-Cured Synthesized LaZrOx Dielectric

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