Numerical simulation of P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+- InAs SH-LED for mid-infrared applications

dc.contributor.author	Sanjeev; Chakrabarti P.
dc.date.accessioned	2025-05-24T09:57:40Z
dc.description.abstract	In this paper, we present ATLAS simulation studies on P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+-InAs SH-LED for operation in 2.4- 3.5 μm spectral range at room temperature. The device has been characterized in terms of energy band diagram, electric field profile, doping profile, current-voltage characteristics and output power using ATLAS software tool from Silvaco®. The outcomes of the numerical simulations are found to be in good agreement with the reported analytical and experimental results.
dc.identifier.doi	DOI not available
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/22425
dc.relation.ispartofseries	Optoelectronics and Advanced Materials, Rapid Communications
dc.title	Numerical simulation of P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+- InAs SH-LED for mid-infrared applications

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