Numerical simulation of P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+- InAs SH-LED for mid-infrared applications

Abstract

In this paper, we present ATLAS simulation studies on P+-InAs0.36Sb0.20P0.44/ n0-InAs/n+-InAs SH-LED for operation in 2.4- 3.5 μm spectral range at room temperature. The device has been characterized in terms of energy band diagram, electric field profile, doping profile, current-voltage characteristics and output power using ATLAS software tool from Silvaco®. The outcomes of the numerical simulations are found to be in good agreement with the reported analytical and experimental results.