A 2danalytical model of the channel potential and threshold voltage of double-gate (dg) mosfets with vertical gaussian doping profile

dc.contributor.author	Tiwari P.K.; Kumar S.; Mittal S.; Srivastava V.; Pandey U.; Jit S.
dc.date.accessioned	2025-05-24T09:57:19Z
dc.description.abstract	The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double- Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel. © 2009 IEEE.
dc.identifier.doi	https://doi.org/10.1109/MSPCT.2009.5164172
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/22012
dc.relation.ispartofseries	2009 International Multimedia, Signal Processing and Communication Technologies, IMPACT 2009
dc.title	A 2danalytical model of the channel potential and threshold voltage of double-gate (dg) mosfets with vertical gaussian doping profile

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