Performance evaluation of double gate junctionless field effect transistor with vertical Gaussian doping profile

Abstract

This paper presents, a simulation based study of Double Gate Junctionless Field Effect Transistor (DG-JLFETs) with Vertical Gaussian Doping profile.The proposed device structure improves the ON to OFF drain current ratio (by ), threshold voltage roll off (by mV),Drain Induced Barrier Lowering (DIBL) (by mV/V) and Sub-Threshold swing (by mV/dec at straggle parameter nm in comparison to uniformly doped channel double gate junctionless Field effect transistors. © 2016 IEEE.