On the scaling of an ion-implanted silicon MESFET

Abstract

An ion-implanted silicon MESFET is scaled to smaller sizes assuming constant field within the device. Ion implantation is a leading techn.ology for VLSI and scaling is an important tool for device miniaturization. A one-dimensional and fairly accurate analysis is carried out considering the effect of side walls in the space-charge region below the gate in the below pinch-off region. Different device parameters such as drain-source current, threshold voltage, time delay, frequency, d.c. power dissipation and switching energy are plotted and discussed with respect to scaling factor for α. The results show how the ion-implanted silicon MESFET device can be optimized with the ad of scaling factor for better device performance. © 1989.