Effects of hydrogenation on the electrical characteristics of Ni/n-Si(111) Schottky diodes

dc.contributor.author	Sahay P.P.; Shamsuddin M.; Srivastava R.S.
dc.date.accessioned	2025-05-24T09:55:29Z
dc.description.abstract	Hydrogenation effects on the electrical characteristics of Ni/n-Si(111) Schottky diodes have been reported from (I-V) and (C-V) studies. It has been concluded that hydrogen lowers the work function of nickel and also generates interfacial traps at the SiSiO2 interface. Slight passivation of deep donor states responding to the lower frequency test signal has also been observed after hydrogenating the diode. © 1991.
dc.identifier.doi	https://doi.org/10.1016/0038-1101(91)90009-N
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/19894
dc.relation.ispartofseries	Solid State Electronics
dc.title	Effects of hydrogenation on the electrical characteristics of Ni/n-Si(111) Schottky diodes

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