Effects of hydrogenation on the electrical characteristics of Ni/n-Si(111) Schottky diodes

Abstract

Hydrogenation effects on the electrical characteristics of Ni/n-Si(111) Schottky diodes have been reported from (I-V) and (C-V) studies. It has been concluded that hydrogen lowers the work function of nickel and also generates interfacial traps at the SiSiO2 interface. Slight passivation of deep donor states responding to the lower frequency test signal has also been observed after hydrogenating the diode. © 1991.