A new infrared avalanche photodiode for long distance fiber optic communication

dc.contributor.author	Chakrabarti P.; Pal B.B.
dc.date.accessioned	2025-05-24T09:55:23Z
dc.description.abstract	Theoretical studies are presented for the response characteristics and quantum efficiency of a new infrared avalanche photodiode (APD) for the 3-4 μm wavelength range. The device structure is a photo-DOVATT (see below) made of InAsxSb1-x InAs, InAsxSb1-x being lattice matched to InAs. We expect it to be used in long distance fiber-optic communication. The calculated gain-bandwidth product is around 20 GHz and the calculated quantum efficiency is 75% near 3 μm wavelength. © 1988.
dc.identifier.doi	https://doi.org/10.1016/0038-1101(88)90078-0
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/19775
dc.relation.ispartofseries	Solid State Electronics
dc.title	A new infrared avalanche photodiode for long distance fiber optic communication

Collections