A new infrared avalanche photodiode for long distance fiber optic communication

Abstract

Theoretical studies are presented for the response characteristics and quantum efficiency of a new infrared avalanche photodiode (APD) for the 3-4 μm wavelength range. The device structure is a photo-DOVATT (see below) made of InAsxSb1-x InAs, InAsxSb1-x being lattice matched to InAs. We expect it to be used in long distance fiber-optic communication. The calculated gain-bandwidth product is around 20 GHz and the calculated quantum efficiency is 75% near 3 μm wavelength. © 1988.