Large-signal behaviour of double-avalanche-region IMPATT diodes

dc.contributor.author	Chakrabarti P.; Choudhury S.C.; Pal B.B.
dc.date.accessioned	2025-05-24T09:55:59Z
dc.description.abstract	A large-signal analysis of double-avalanche-region (DAR) IMPATT diodes has been presented. Analytical expressions for the output power, admittance and efficiency of the device have been derived and their variations with different parameters studied. Results show that DAR IMPATT will be useful as a fixed-frequency millimetre-wave oscillator free from harmonics. © 1987.
dc.identifier.doi	https://doi.org/10.1016/0038-1101(87)90141-9
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/20485
dc.relation.ispartofseries	Solid State Electronics
dc.title	Large-signal behaviour of double-avalanche-region IMPATT diodes

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