Large-signal behaviour of double-avalanche-region IMPATT diodes

Abstract

A large-signal analysis of double-avalanche-region (DAR) IMPATT diodes has been presented. Analytical expressions for the output power, admittance and efficiency of the device have been derived and their variations with different parameters studied. Results show that DAR IMPATT will be useful as a fixed-frequency millimetre-wave oscillator free from harmonics. © 1987.