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Compositional dependence of permittivity in quarternary III-V semiconductor compounds
| dc.contributor.author | Pal B.B. | |
| dc.date.accessioned | 2025-05-24T09:55:49Z | |
| dc.description.abstract | An empirical relation for the relative permittivity in quarternary III-V semiconductor compounds is suggested as a function of composition. The expression for the permittivity of ternary III-V compounds can be obtained from that as a special case which is identical to that already available in the literature. Graphs have been plotted for static and optical permittivities against composition for the widely used quarternary semiconductor In1-xGaxAsyP1-y and are discussed. © 1985. | |
| dc.identifier.doi | https://doi.org/10.1016/0038-1101(85)90047-4 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/20285 | |
| dc.relation.ispartofseries | Solid State Electronics | |
| dc.title | Compositional dependence of permittivity in quarternary III-V semiconductor compounds |