Compositional dependence of permittivity in quarternary III-V semiconductor compounds

Abstract

An empirical relation for the relative permittivity in quarternary III-V semiconductor compounds is suggested as a function of composition. The expression for the permittivity of ternary III-V compounds can be obtained from that as a special case which is identical to that already available in the literature. Graphs have been plotted for static and optical permittivities against composition for the widely used quarternary semiconductor In1-xGaxAsyP1-y and are discussed. © 1985.