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SnS and ZnO Nanocomposite Prepared by Dispersion Method for Photodetector Application
| dc.contributor.author | Dwivedi A.K.; Jit S.; Tripathi S. | |
| dc.date.accessioned | 2025-05-23T11:12:29Z | |
| dc.description.abstract | This letter reports a SnS2 and ZnO nanocomposite (NC) prepared by dispersion method. The nanocomposite shows promising characteristics for optoelectronic application. SnS2:ZnO NC shows a wide absorption spectrum covering ultraviolet (UV)-visible-near infrared (NIR) regions. Hence, using the proposed nanocomposite a broadband photodetector with a structure comprising Al/ SnS2:ZnO/PEDOT:PSS/ Indium Tin Oxide (ITO) is fabricated. At a bias voltage of 1 V, the measured responsivity values (A/W) of the proposed device are 140.41, 848.63, and 1094.48 at 350 nm (UV), 750 nm (visible) and 900 nm (NIR), respectively. © 2023 IEEE. | |
| dc.identifier.doi | https://doi.org/10.1109/TSM.2023.3347606 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/4779 | |
| dc.relation.ispartofseries | IEEE Transactions on Semiconductor Manufacturing | |
| dc.title | SnS and ZnO Nanocomposite Prepared by Dispersion Method for Photodetector Application |