Quantum Well Injection Transit Time device (QWITT)

dc.contributor.author	Pal B.B.; Khan R.U.
dc.date.accessioned	2025-05-24T09:57:49Z
dc.description.abstract	Quantum Well Injection Transit Time (QWITT) Diode has been proposed recently to improve the performance of quantum well devices incorporating the effect of transit time of carriers. Earlier, transit time devices such as IMPATT, BARITT, DOVATT, TRAPATT, TUNETT show different types of performances with certain limitations. QWITT is a low noise device applicable to sub-millimeter frequency range. Large signal simulations show that a QWITT device may be capable of producing approximately + 5dBm power at 200 GHz. © 1992 SPIE. All rights reserved.
dc.identifier.doi	https://doi.org/10.1117/12.57001
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/22590
dc.relation.ispartofseries	Proceedings of SPIE - The International Society for Optical Engineering
dc.title	Quantum Well Injection Transit Time device (QWITT)

Collections