Quantum Well Injection Transit Time device (QWITT)

Abstract

Quantum Well Injection Transit Time (QWITT) Diode has been proposed recently to improve the performance of quantum well devices incorporating the effect of transit time of carriers. Earlier, transit time devices such as IMPATT, BARITT, DOVATT, TRAPATT, TUNETT show different types of performances with certain limitations. QWITT is a low noise device applicable to sub-millimeter frequency range. Large signal simulations show that a QWITT device may be capable of producing approximately + 5dBm power at 200 GHz. © 1992 SPIE. All rights reserved.