Influence of ionising radiation on the performance of CMOS inverter

Abstract

The effect of ionising radiation on the performance of complementary metal-oxide-semiconductor (CMOS) inverter circuit has been investigated theoretically. The radiation induced changes of the constituent transistors (NMOS and PMOS) of CMOS have been used to predict the performance of CMOS inverter in the nuclear radiation environment. The post-irradiated device parameters extracted from the two-dimensional numerical model developed by us were used to simulate the response of CMOS inverter using SPICE package. © 2001 Elsevier Science Ltd.