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Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs
| dc.contributor.author | Tiwari P.K.; Dubey S.; Jit S. | |
| dc.date.accessioned | 2025-05-24T09:55:35Z | |
| dc.description.abstract | In this paper, a short-channel subthreshold swing model for three-terminal (3T) double-gate (DG) MOSFETs with Gaussian doping profile in the vertical direction of the channel is presented. The effective conduction path effect concept of uniformly doped DG MOSFETs is utilized to incorporate the doping dependency in the present model. The effect of varying peak doping position of Gaussian profile on the subthreshold swing is studied. ©2010 IEEE. | |
| dc.identifier.doi | https://doi.org/10.1109/ICSICT.2010.5667663 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/20030 | |
| dc.relation.ispartofseries | ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | |
| dc.title | Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs |