Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs

Abstract

In this paper, a short-channel subthreshold swing model for three-terminal (3T) double-gate (DG) MOSFETs with Gaussian doping profile in the vertical direction of the channel is presented. The effective conduction path effect concept of uniformly doped DG MOSFETs is utilized to incorporate the doping dependency in the present model. The effect of varying peak doping position of Gaussian profile on the subthreshold swing is studied. ©2010 IEEE.