Modeling and ATLAS simulation studies on midinfrared homojunction LED

dc.contributor.author	Sanjeev; Chakrabarti P.
dc.date.accessioned	2025-05-24T09:56:58Z
dc.description.abstract	In this paper, we present ATLAS simulation studies of a mid-infrared (MIR) PIN homo-junction light emitting diode (LED) based on p+-InAs O.91SbO.091 nO-InAsO.91Sb o.09 I n+-InAsO.91Sbo.09 material system at room temperature. Various electro-optical properties of the LED have been modeled. The effect of high carrier injection has been evaluated on the output power of LED and theoretical findings found to be in .good agreement with the reported experimental results.
dc.identifier.doi	DOI not available
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/21609
dc.relation.ispartofseries	2008 2nd National Workshop on Advanced Optoelectronic Materials and Devices, AOMD 2008
dc.title	Modeling and ATLAS simulation studies on midinfrared homojunction LED

Collections