Modeling and ATLAS simulation studies on midinfrared homojunction LED

Abstract

In this paper, we present ATLAS simulation studies of a mid-infrared (MIR) PIN homo-junction light emitting diode (LED) based on p+-InAs O.91SbO.091 nO-InAsO.91Sb o.09 I n+-InAsO.91Sbo.09 material system at room temperature. Various electro-optical properties of the LED have been modeled. The effect of high carrier injection has been evaluated on the output power of LED and theoretical findings found to be in .good agreement with the reported experimental results.