“GATE INTERFACE STUDY FOR THE IMPROVEMENT OF IONCONDUCTING DIELECTRIC BASED LOW OPERATING VOLTAGE THIN FILM TRANSISTOR

Abstract

Thin-film transistors (TFT) serve as the foundation of flat-panel display devices. In order to achieve great performance while lowering production costs, researchers looked into a variety of materials in TFTs. Metal-oxides have gained a lot of attention in recent years for thin film transistors due to their broad area manufacturing compatibility, high mobility, and low leakage density properties. At present time, higher resolution, larger screen sizes, and reduced power consumption in FPDs have become increasingly important, which pushes traditional amorphous Si (a-Si) TFT technology to its limits. On the other hand, metal-oxide TFTs have been widely explored for a variety of applications, including phototransistor arrays, gas and pressure sensors, light emitting transistors, photo-detectors, memory, and synaptic devices etc.