Tunnel diode integrated two-layer microstrip patch antenna

dc.contributor.author	Srivastava S.; Vishvakarma B.R.
dc.date.accessioned	2025-05-24T09:56:27Z
dc.description.abstract	Theoretical investigations were carried out on the GaAs and Ge tunnel-diode-loaded patch with one parasitic element. It has been found that the radiated power increases due to mutual coupling between the patches typically by 1.95 dB in case of GaAs tunnel-diode-loaded patch and 5.95 dB in case of Ge tunnel-diode-loaded patch. It is also observed that the antenna can be operated over a range of frequency from 0.9975 GHz to 1.0002 GHz for GaAs tunnel-diode-loaded patch and from 56.694 GHz to 64.729 GHz for Ge tunnel-diode-loaded patch just by varying the bias voltage.
dc.identifier.doi	DOI not available
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/21039
dc.relation.ispartofseries	Indian Journal of Radio and Space Physics
dc.title	Tunnel diode integrated two-layer microstrip patch antenna

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