Theoretical characterisation of a superlattice avalanche photodiode

Abstract

A superlattice avalanche photodiode using III-V materials is expected to be used in long-distance fiberoptic communication systems in the 1.3 to 1.55 μm wavelength range. Theoretical studies have been made on the effective ionization rates of electrons and holes of the device, I-V characteristic and the frequency response characteristic of the AlxGa1-xAs/GaAs superlattice p+-i-n+ structure. It is observed that the α/β ratio of the device increases with the field and the bandwidth of the response curve increases with decrease in the dc multiplication gain. © 1987 Springer-Verlag.