Multilayer Micromagnetic Models for All Spin Logic

Abstract

This paper presents a novel approach to modeling of all spin logic devices using multilayer micromagnetic models. Using the proposed approach, micromagnetic analysis of all-spin logic device (ASLD) and universal all-spin logic gate is performed. The multilayer structure-based model captures the universal all spin device which can be configured to operate as NAND, NOR, AND, and OR logic operations. OOMMF (Object Oriented MicroMganetic Framework) is used for developing the proposed model. Furthermore, to capture spin transport, tool command language (TCL) based model is developed for spin diffusion using distributed and lumped approach. The impact of influence area, reverse spin current (back flow), and critical/threshold switching current are also analyzed. © 2020 IEEE.