Subthreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile

Abstract

This paper presents a short-channel subthreshold current model for the double gate (DG) MOSFET having Gaussian doping profile in the vertical direction of the channel. The present model is based on the assumption that diffusion is the dominant carrier transportation mechanism in the subthreshold regime of device operation. The effects of channel length and channel doping on subthreshold current have been demonstrated in present work. Asymmetry due to the variable peak position of the Gaussian doping has also been incorporated in the present model. Model verification is carried out using 2D device simulator ATLAS™.