Generic model of an InAsSb/InAsSbP DH-LED for midinfrared (2-5μm) applications

Abstract

In this paper, we present a generic model of P+-InAs0.48Sb0.22P0.30/ n0-InAs0.89Sb0.11/ N--InAs0.48Sb0.22P0.30 double heterostructure light emitting diode (DH-LED) suitable for use as a source in absorption gas spectroscopy and futuristic optical fiber communication systems in the mid-infrared spectral region at 300K. The model takes into account all dominant radiative and non-radiative recombination processes, interfacial recombination and self-absorption in the active layer of the DH-LED structure. The proposed DH-LED has been studied for mid-infrared applications by considering the modulation bandwidth and its variation with active layer width, doping concentration, and injected carrier density. The rise time of the structure has been evaluated by considering the transient response for a step current of 50mA. The performance of the DH-LED has also been investigated at high carrier injection. The carrier leakage through the heterostructure, which affect the output power, is estimated in terms of confinement factor at high injection. The output power of the DH-LED has been computed as a function of bias current and compared/ contrasted with the reported experimental results.