Scaling rule for OPFET

dc.contributor.author	Pal B.B.; Chattopadhyay S.N.
dc.date.accessioned	2025-05-24T09:58:11Z
dc.description.abstract	A scaling rule has been suggested to miniaturize the ion implanted GaAs optical field effect transistor (OPFET). The absorption coefficient and the generation rate have been scaled alongwith electrical parameters and device dimensions. Plots have been made for drain-source current, cut-off frequency, and the dc power dissipation of the device. © 1996 IEEE.
dc.identifier.doi	https://doi.org/10.1109/16.481744
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/23038
dc.relation.ispartofseries	IEEE Transactions on Electron Devices
dc.title	Scaling rule for OPFET

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