Simulation investigation of S/Ku dual-band magnetically insulated line Oscillator

dc.contributor.author	Kumar A.; Tripathi P.; Dwivedi S.; Jain P.K.
dc.date.accessioned	2025-05-24T09:31:59Z
dc.description.abstract	A dual-band Magnetically insulated line oscillator (MILO) generating RF in S-band and Ku-band has been presented. The standard device design methodology has been followed for design and validated through simulation. The dispersion diagram for both S-band and Ku -band calculated through EIGEN mode simulation. For the PIC simulation of the device, typically selected beam parameters: diode voltage of 610 kV and diode current of 58 kA, generates the RF of 3.1 GW at frequency 14.1 GHz and RF of 1.2 GW at frequency 2.1 GHz. The overall efficiency of ~12.1 % has been achieved through the device with frequency difference of 8.4 dB. © 2018 IEEE.
dc.identifier.doi	https://doi.org/10.1109/IMaRC.2018.8877327
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/17599
dc.relation.ispartofseries	IEEE MTT-S International Microwave and RF Conference, IMaRC 2018
dc.title	Simulation investigation of S/Ku dual-band magnetically insulated line Oscillator

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