The effect of surface recombination and modulated frequency on the intrinsic parameters of an ion implanted GaAs OPFET

Abstract

The effect of surface recombination & modulated frequency on the intrinsic parameters of an ion implanted GaAs optical field effect transistor have been analysed. The study reveals that the gate-source capacitance increases with gate-source voltage first slowly & then sharply under normally OFF condition with the increase of modulated frequency. However, the surface recombination reduces these effects depending upon the trap centre density. These variations are small in normally ON device. Also the drain-source resistance is found to increase with the increase of modulating frequency but it reduces with the reduction of trap-centre density at a fixed flux density & drain-source voltage. © 1992 SPIE. All rights reserved.