Frequency dependent behaviour of an ion implanted GaAs OPFET considering the photovoltaic effect and the gate depletion width modulation

Abstract

The frequency dependent behaviour of an ion implanted GaAs OPFET has been presented, considering the photovoltaic effect due to signal modulated incident radiation on the transparent/semitransparent Schottky gate of the device and the gate depletion width modulation. The results show that the signal frequency has significant effect on the device parameters between 107 and 1012 Hz. Below 107 Hz and above 1012 Hz the device parameters become independent of the signal frequency because the a.c. terms are negligible compared to their d.c. counterparts. The photovoltage, drain-source current and channel conductance have been plotted and discussed. The device works in the enhancement mode. © 1995.