Stability of the darlington composite transistor

Abstract

It has been shown that the current gain of a composite p-n-p junction transistor in the common base configuration approaches unity as the number of transistors is increased in the composite system. Mathematical analysis, however, shows that the stability of such a composite transistor is appreciably increased if the current gain of one of the transistors is greater than unity. It is therefore suggested that in the composite system one of the transistors should be of the point contact type in order to satisfy the above condition. It has been further shown that, by addition of such a transistor, the current gain of the composite transistor system can be made much higher than that of the single one. © Taylor and Francis Group, LLC.