Study of Gallium Arsenide Based Perfect Metamaterial Absorber in the Broadband Region
| dc.contributor.author | Kumar R.; Singh B.K.; Pandey P.C. | |
| dc.date.accessioned | 2025-05-23T11:31:10Z | |
| dc.description.abstract | A photovoltaic cell requires the perfect absorption of solar energy which can be converted into electrical energy. We present a simulative work on gallium arsenide (GaAs) based absorber, which provides a broad absorbance in the wavelength regime 200-1000 nm. This absorber has the simplest design of a square resonator built up over tungsten metal. This metal provides high thermal stability due to the high melting point. We found that the proposed MPA is insensitive to the incident angle. Moreover, we have shown the impedance matching of absorber with free space, absorbance with different incident angles, the effect of thickness of resonator, and comparison with the various dielectric spacers. © 2020 IEEE. | |
| dc.identifier.doi | https://doi.org/10.1109/INDICON49873.2020.9342338 | |
| dc.identifier.uri | http://172.23.0.11:4000/handle/123456789/13013 | |
| dc.relation.ispartofseries | 2020 IEEE 17th India Council International Conference, INDICON 2020 | |
| dc.title | Study of Gallium Arsenide Based Perfect Metamaterial Absorber in the Broadband Region |