Design, Analysis and Simulation Study of Dielectric Filled S-Band Tapered Magnetically Insulated Line Oscillator (MILO)

Abstract

In this article, S-band tapered magnetically insulated line oscillator (MILO) with partially dielectric loaded cavities is proposed to improve the overall efficiency of the MILO device. In the proposed structure, the tapered interaction cavities of the MILO are partially filled with the low loss dielectric material. An equivalent circuit analysis is performed to get the dispersion characteristic of the resonating structure of the proposed MILO. An extensive simulation study is carried out to get electromagnetic (EM) and RF behavior of the proposed structure using 3D EM simulation tool (i.e., CST Studio Suite). The EIGENMODE solver of the CST is used to get the dispersion characteristic of the resonating structure which are also used to validate the device design parameters. The RF behavior of the proposed structure with and without dielectric loading is investigated using CST's particle-in-cell (PIC) solver. The modelled structure is simulated with 500 kV diode voltage and 35 kA diode current. The PIC simulation predicts that the without dielectric loading the modelled device generates ~2.4 GW average power at center frequency 2.65 GHz in TM01 mode with an electronic efficiency of ~13.71%. While with dielectric loading, the modelled device generates an average power of ~3.38 GW at frequency 2.56 GHz with overall efficiency of 19.3%. In this study, for the first time we have explored the S-band tapered MILO with partial dielectric loading and the effect of cathode misalignment on RF output power which has not yet been reported anywhere © 2022. IAMOT