A 2D analytical modeling approach for nanoscale strained-Si (s-Si) on silicon-germanium-on-insulator (SGOI) MOSFETs by evanescent mode analysis

dc.contributor.author	Kumar M.; Dubey S.; Jit S.; Tiwari P.K.
dc.date.accessioned	2025-05-24T09:15:09Z
dc.description.abstract	This paper presents a compact two-dimensional (2D) analytical model of short-channel strained-Si on SGOI MOSFETs. The channel potential is obtained by solving 2D Poisson's equation using evanescent mode analysis. The analytical model takes into account the effects of all the device parameters along with Ge mole fraction in the relaxed SiGe layer on the subthreshold device characteristics. In addition, the threshold voltage and subthreshold slope, the key subthreshold physical parameters, are formulated by employing surface potential. For the validation of model, the model results have been compared with numerical simulation results from ATLAS™ by Silvaco. © 2012 IEEE.
dc.identifier.doi	https://doi.org/10.1109/CODIS.2012.6422235
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/13551
dc.relation.ispartofseries	Proceedings of the 2012 International Conference on Communications, Devices and Intelligent Systems, CODIS 2012
dc.title	A 2D analytical modeling approach for nanoscale strained-Si (s-Si) on silicon-germanium-on-insulator (SGOI) MOSFETs by evanescent mode analysis

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