Hot Carrier Effect in Single Injection Diode with Thermal Free Carriers

dc.contributor.author	Sharma Y.K.; Srivastava B.B.
dc.date.accessioned	2025-05-24T09:58:42Z
dc.description.abstract	Expressions for the noise temperatures in a single injection solid state diode operating in the hot carrier regime are given for the space‐charge and ohmic region separately. The method of regional approximation is used to separate the insulator into two regions. It is shown that the difference between the noise temperature and lattice temperature in the case of the insulator with thermal free carriers is always less than the value calculated in the absence of thermal free carriers. Copyright © 1975 Wiley‐VCH Verlag GmbH & Co. KGaA
dc.identifier.doi	https://doi.org/10.1002/pssa.2210270236
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/23636
dc.relation.ispartofseries	physica status solidi (a)
dc.title	Hot Carrier Effect in Single Injection Diode with Thermal Free Carriers

Collections