Resistance parameters of composite transistors

Abstract

The resistance parameters and the simplified equivalent circuit of the two stage composite transistor configuration in terms of the parameters of the individual transistor in the common emitter configuration are derived. The analysis applicable to the calculations of current gain, input and output resistances, voltage gain and power gain of the composite configuration is extended for a composite transistor circuit consisting of an arbitrary number of transistors. The results are found in agreement with those derived by others. © Taylor and Francis Group, LLC.