Optical characteristics of solution processed MoO2/ZnO quantum dots based thin film transitor

Abstract

The present work reports the ultra-violet (UV) and electrical characteristics of solution processed MoO2/ZnO Quantum Dot (QD) based thin film transistor, ZnO QDs thin films are deposited using low-cost solution processing over the Al2O3/p-Si substrates. A very thick layer of Al2O3 (250 nm) is deposited using e-beam evaporation (10-6 mbar). MoO2 is deposited using the thermal evaporation over the ZnO thin film and the achieved thickness is of 25nm. Top and bottom Al contacts were deposited using thermal evaporation and of 50nm and 80nm respectively. Device is characterized in the form of back gate ZnO Thin film transistor (TFT), illuminated from the front side. The UV detection property of the device is performed under the illumination of UV lamp (Puv = 650μW) with wavelength of 365nm. The results obtained with the Vds versus Ids plot shows the significant improvement in the drain current with UV exposure. © 2016 IEEE.