Double-gate (DG) MOSFETs: A review

dc.contributor.author	Tiwari P.K.; Dubey S.; Jit S.
dc.date.accessioned	2025-05-24T09:56:15Z
dc.description.abstract	A detailed review of the double-gate (DG) MOSFETs has been presented in this chapter. Various configurations of the device structure have been discussed. A detailed review of the modeling and simulation of subthreshold characteristics in terms of threshold voltage, subthreshold swing and subthreshold current of the short-channel DG MOS devices has also been discussed. Finally, a doping dependent model for the subthreshold characteristics of a symmetric uniformly doped short-channel DG MOSFET has been presented in this chapter. © 2012 Nova Science Publishers, Inc. All rights reserved.
dc.identifier.doi	DOI not available
dc.identifier.uri	http://172.23.0.11:4000/handle/123456789/20794
dc.relation.ispartofseries	Advances in Microelectronics and Photonics
dc.title	Double-gate (DG) MOSFETs: A review

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