Analysis of an n-channel MOSFET magnetic sensor with non-uniform impurity profile

Abstract

A theoretical analysis is presented of an n-channel MAGFET with a non-uniform (displaced Gaussian function) and a uniform impurity profile for the detection of magnetic fields. Consideration of a non-uniform impurity profile in the channel region of a MAGFET is closer to the practical situation. The Hall voltage and sensitivity of the MAGFET for different magnetic fields, source-drain and gate voltages have been evaluated and compared. The results reveal higher sensitivity of the MAGFET in the triode region of operation when calculated using a non-uniform impurity profile compared to a MAGFET with a uniform impurity profile. The present analysis also includes the effect of the location of the Hall contacts on the MAGFET performance. It indicates that the dependence of the sensitivity on the uniformity of the impurity profile and the effective gate voltage is a minimum when the Hall contact lies at a distance of 0.6 L from the source. © 1991.