Large signal model of an optically controlled GaAs IMPATT diode

Abstract

A large signal model of an optically controlled Read-type GaAs IMP ATT diode has been presented. In contrast to other existing theories, we consider the effect of photogenerated carriers in the avalanche zone which significantly affects the device characteristics in the illuminated condition. The model presented here is used to examine the effect of illumination on the output power, efficiency and negative conductance of the device. It has been found that for constant bias current, the output power and efficiency of the device are strong functions of the incident optical power. The model can be used as a basic tool for optimising GaAs IMPATT diodes for optically controlled applications in microwave region. © 1997 Taylor & Francis Group, LLC.